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  1. Gamo PT-80 C02 Pistol - Powerful and Precise Air Compressed Gun

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    Pt can be deposited via ALD by (methylcyclopentadienyl) trimethylplatinum (MeCpPt-Me 3) precursor and an air (oxygen) counter reactant. Pt-ALD is typically performed around 275–300 °C. Pt-ALD and noble metal ALD, in general, suffer from slow nucleation rates.
    ALD is a deposition method with great potential for producing very thin, conformal films with control of the thickness and composition of the films possible at the atomic level. A major driving force for the recent interest is the prospective seen for ALD in scaling down microelectronic devices according to Moore's law.
    Consequently, when describing an ALD process one refers to both dose times (the time a surface is being exposed to a precursor) and purge times (the time left in between doses for the precursor to evacuate the chamber) for each precursor. The dose-purge-dose-purge sequence of a binary ALD process constitutes an ALD cycle.
    This process is then cycled until the appropriate film thickness is achieved. Typically, ALD processes are conducted at modest temperatures (<350 °C). The temperature range where the growth is saturated depends on the specific ALD process and is referred to as the ‘ALD temperature window’.
  3. Atomic layer deposition of high-quality Pt thin film as an …

  4. Atomic Layer Deposition of Pt Thin Films Using …

    WebPt thin films, using the Pt precursor, dimethyl(N,N-dimethyl-3-butene-1-amine-N)platinum (DDAP, C 8 H 19 NPt), were deposited by atomic layer deposition (ALD). The growth characteristics of the Pt thin films were …

  5. A brief review of atomic layer deposition: from fundamentals to ...

  6. Surface Chemistry during Atomic Layer Deposition of Pt Studied …

  7. Atomic layer deposition - Wikipedia

  8. ALD-PT80 パーティション 1台 サンワサプライ 【通販モノタロウ】

  9. Localized growth of atomic-layer-deposited platinum