Semiconductor bipolar SRAM was invented in 1963 by Robert Norman at Fairchild Semiconductor. The
SRAM … See more

Though it can be characterized as volatile memory, SRAM exhibits data remanence.
SRAM offers a simple data access model and does not require a refresh circuit. Performance and reliability are good and power cons… See more

Many categories of industrial and scientific subsystems, automotive electronics, and similar embedded systems, contain SRAM which, in this context, may be referred to as ESRAM. Some amount (kilobytes or less) is also embed… See more

Non-volatile SRAM (nvSRAM) has standard SRAM functionality, but they save the data when the power supply is lost, ensuring preservation of critical information. nvSRAMs are used in a wide range of situations … See more

A typical SRAM cell is made up of six MOSFETs, and is often called a 6T SRAM cell. Each bit in the cell is stored on four transistors (M1, M2, M3, M4) that form two cross-coupled inverters. This storage cell has two sta… See more

An SRAM cell has three states:
• Standby: The circuit is idle.
• Reading: The data has been requested.
• Writing: Updating the contents.… See more

With the introduction of the FinFET transistor implementation of SRAM cells, they started to suffer from increasing inefficiencies in cell sizes. Over the last 30 years (from 1987 to 2017) with a steadily decreasing transistor size (node … See more