Magnetoresistive RAM - Wikipedia
ウェブMagnetoresistive random-access memory ( MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. [1] Developed in the mid-1980s, proponents have argued that magnetoresistive RAM will eventually surpass competing technologies to become a dominant or even universal memory. [2]
磁気抵抗メモリ - Wikipedia
ウェブ磁気抵抗メモリ （じきていこうメモリ、 英: Magnetoresistive Random Access Memory 、 MRAM 、エムラム）は、 磁気トンネル接合 （Magnetic tunnel junction、MTJ）を構成要素とする 不揮発性メモリ である。 SRAM や DRAM などの電荷を情報記憶に用いるメモリと異なり、MRAMは MTJ の磁化の状態（平行/反平行）によって情報記憶を行 …
Everspin Technologies - Wikipedia
ウェブEverspin Technologies, Inc. is a publicly traded semiconductor company headquartered in Chandler, Arizona, United States. It develops and manufactures discrete magnetoresistive RAM or magnetoresistive random-access memory (MRAM) products, including Toggle MRAM and Spin-Transfer Torque MRAM (STT-MRAM) product families.
MRAM (magnetoresistive random access memory) - TechTarget
ウェブ2021年10月19日 · MRAM is a method of storing data using magnetic states instead of electrical charges like DRAM, for example. Explore how it works, is used and STT-MRAM.
Spin-transfer torque - Wikipedia
ウェブSpin-transfer torque ( STT) is an effect in which the orientation of a magnetic layer in a magnetic tunnel junction or spin valve can be modified using a spin-polarized current. Charge carriers (such as electrons) have a property known as spin which is a small quantity of angular momentum intrinsic to the carrier.
Magnetoresistive Random Access Memory: Present and Future
ウェブ2020年1月30日 · Abstract: Magnetoresistive random access memory (MRAM) is regarded as a reliable persistent memory technology because of its long data retention and robust endurance. Initial MRAM products utilized toggle mode writing of a balanced synthetic antiferromagnet (SAF) free layer to overcome problems with half …
Magnetoresistive Random-Access Memory - an overview ...
ウェブMRAM (magnetoresistive random access memory) chip, based on a type of memory that could eventually replace both the high-speed memory in a computer and flash memory in cell phones and digital cameras. MRAM stores
MRAM makes its mark | Nature Electronics
ウェブ2022年12月2日 · A compact and energy-efficient magnetoresistive random-access memory (MRAM) technology could help lower the power consumption of data storage and management. Society is currently...
MRAM Fundamentals and Devices | SpringerLink
ウェブMRAM is defined as a memory which uses magnetoresistance effect for reading principle regardless of writing principles. There are AMR (Anisotropic MagnetoResistance), GMR (Giant MagnetoResistance), and TMR (Tunnel
MRAM gets closer to the core | Nature Electronics
ウェブ2019年12月6日 · Magnetoresistive random-access memory (MRAM) is one alternative approach. The basic cell of MRAM is a magnetic tunnel junction (MTJ), which consists of a magnetic fixed layer, a...
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